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Logic inverter, which lays the foundation for the functionality of large-scale integrated circuits, has been achieved by anti-ambipolar transistors (AATs) based on two-dimensional (2D) van der Waals heterojunction (vdWH). However, the doping strategy in 2D vdWHs AATs on figures of merit for logic inverters has never been analyzed. Herein, free-standing 2D GeSxSe1-x (0 ≤ x ≤ 0.73) with precisely tunable composition is grown to fabricate GeSxSe1-x/SnS2 vdWH AATs for optimal logic inverter. By leveraging the elemental modulation in GeSxSe1-x, the proposed vdWH can be tuned from type-II to type-III band alignment, allowing for distinctive tunneling process at various bias. The proposed devices with S-poor content exhibit better peak-to-valley ratio of 6.6 × 103 at x = 0.29 and maximum peak current of 1.4 × 10-7 A at x = 0. Furthermore, the inverter utilizing showcases the highest voltage gain of 8.83 at x = 0.29, while the device with S-rich delivers a low static power of 12.1 pW, which is attributed to the optimization of band engineering and the low driving voltage under the bottom h-BN/Au structure. This work contributes insights into the expansion of alloy engineering in the construction of high-performance multi-valued logic inverter.
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