The combination of plasmonic systems and the high optical gain of InGaN is a promising approach for the fabrication of nanolasers and other nanoscale light sources. Here, we demonstrate, for the first time, the use of MBE-grown GaN nanowires with embedded InGaN quantum wells as the key components for plasmonic nanolasers. The utilization of quantum wells as the semiconductor gain medium, combined with the plasmonic AlOx/Ag system, shows an emission linewidth as narrow as 0.15 nm at 5 K. Modeling the dispersion of surface plasmon polaritons in the nanowires on an AlOx-coated Ag film reveals the formation of hybrid modes and shows an excellent spectral overlap with the InGaN QW emission, providing evidence for a strong exciton–plasmon interaction in the studied structure. This strong interaction yields an estimated average Purcell factor of 27, which is essential for realizing nanoscale high-speed optical components.
